The AM008030WM-BM/EM/FM-R is an ultra-broadband Gallium Arsenide (GaAs) MMIC power amplifier designed for RF and microwave systems operating from 50 MHz to 10 GHz. The amplifier provides high gain and strong output power across a wide frequency range, delivering approximately 18 dB of gain and more than 28 dBm output power. Internally matched to 50 ohms at both the input and output, the device enables straightforward integration into broadband RF modules and microwave assemblies. The amplifier is available in ceramic surface-mount packages as well as flange-mounted versions for improved thermal management. Typical applications include software-defined radio systems, instrumentation platforms, and broadband gain block stages.
General Specifications:
Device Type: GaAs MMIC Power Amplifier
Frequency Range: 50 MHz – 10 GHz
Small Signal Gain: 18 dB (typical), 14 dB (minimum), 22 dB (maximum)
Gain Ripple: ±3 dB (typical), ±4 dB (maximum)
P1dB Output Power: 30 dBm (typical @ 2 GHz), >27 dBm (0.1–8 GHz)
Saturated Output Power (Psat): 31 dBm (typical @ 2 GHz), >28 dBm (0.1–8 GHz)
Third Order Intercept (IP3): 48 dBm (typical @ 1 GHz)
Input Return Loss: 9 dB (typical), 15 dB (maximum)
Output Return Loss: 7 dB (typical), 10 dB (maximum)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vdd = +12 V, Idq = 400 mA
Package Options: Ceramic SMT (BM), Copper Flange (FM), CuW Flange (EM)
