The AM00020026WM-QN5-R is a broadband Gallium Arsenide (GaAs) MMIC distributed power amplifier designed for RF and microwave systems operating from DC to 20 GHz. The amplifier provides approximately 13 dB of gain and up to 26 dBm saturated output power, making it suitable for use as a driver stage in broadband microwave and millimeter-wave systems. The device features internally matched 50-ohm input and output ports for simplified integration and stable performance across a wide frequency range. Packaged in a compact 5 x 5 mm 20-pin QFN package, the amplifier supports automated assembly and reliable operation in commercial, industrial, and defense applications. Typical applications include test instrumentation, commercial telecom transmission equipment, fiber optic systems, and military or space electronics.
General Specifications:
Device Type: GaAs MMIC Driver Amplifier
Frequency Range: DC – 20 GHz
Small Signal Gain: 13 dB (typical), 11 dB (minimum)
Gain Ripple: ±1 dB (typical), ±3 dB (maximum)
P1dB Output Power: 24 dBm (typical, DC–12 GHz), 23 dBm (typical, 12–18 GHz)
P3dB Output Power: 26 dBm (typical, DC–12 GHz), 25 dBm (typical, 12–18 GHz)
Saturated Output Power (Psat): 26 dBm (typical)
Noise Figure: 4 dB (typical)
Input Return Loss: 10 dB (typical)
Output Return Loss: 10 dB (typical)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vdd = +15 V, Vgg2 = +4 V, Idd = 130 mA
Package: 5 x 5 mm QFN, 20-Pin
