The AM00010037WN-SN-R is a broadband Gallium Nitride (GaN) MMIC power amplifier designed for RF and microwave systems operating from DC to 10 GHz. The amplifier delivers strong output power and stable broadband gain, making it suitable for driver or output stages in high-frequency systems. Packaged in a ceramic flange package with straight RF and DC leads for drop-in assembly, the device simplifies integration into RF modules while maintaining excellent thermal performance. Typical applications include instrumentation, commercial telecom transmission equipment, and fixed microwave backhaul systems.
General Specifications:
Device Type: GaN MMIC Power Amplifier
Frequency Range: DC – 10 GHz
Small Signal Gain: 13 dB (typical), 10 dB (minimum)
Gain Ripple: ±1.5 dB (typical), ±3.0 dB (maximum)
P1dB Output Power: 30 dBm (typical)
P5dB Output Power: 37 dBm (typical), 35 dBm (minimum)
P5dB Power Added Efficiency (PAE): 22% (typical)
P5dB Drain Efficiency: 25% (typical)
Noise Figure: 5 dB (typical, 1–9 GHz)
Input Return Loss: 9 dB (typical)
Output Return Loss: 7 dB (typical)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vds = 28 V, Ids = 300 mA, Vgs = -2 V
Package: Ceramic flange package with straight RF and DC leads (RoHS compliant)
