The AM009023WM-BM/EM/FM-R is an ultra-broadband Gallium Arsenide (GaAs) MMIC power amplifier designed for RF and microwave systems operating from 50 MHz to 9 GHz. The amplifier provides high gain and reliable broadband performance, delivering approximately 21 dB of gain and up to 23 dBm output power. With a low noise figure of approximately 4.5 dB up to 4 GHz, the device is well suited for low-noise gain stages and broadband RF amplification. The amplifier is internally matched to 50 ohms at both the input and output, simplifying integration into RF modules and microwave assemblies. The device is available in multiple package configurations including ceramic surface-mount and flange-mounted versions for improved thermal management in higher power applications.
General Specifications:
Device Type: GaAs MMIC Power Amplifier
Frequency Range: 50 MHz – 9 GHz
Small Signal Gain: 21 dB (typical), 17 dB (minimum), 25 dB (maximum)
Gain Ripple: ±3 dB (typical), ±4 dB (maximum)
P1dB Output Power: 21 dBm (typical, 0.1–8 GHz)
Saturated Output Power (Psat): 23 dBm (typical, 0.1–8 GHz)
Third Order Intercept (IP3): 30 dBm (typical @ 1 GHz)
Noise Figure: 4.5 dB (typical, up to 4 GHz)
Input Return Loss: 3 dB (typical), 5 dB (maximum)
Output Return Loss: 7 dB (typical), 10 dB (maximum)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vdd = +12 V, Idq = 250 mA, Vgs1 = -0.92 V, Vgs2 = -0.92 V
Package Options: Ceramic SMT (BM), Copper Flange (FM), CuW Flange (EM)
