The AM00010037WN-00 is a broadband Gallium Nitride (GaN) MMIC power amplifier designed for RF and microwave systems operating from DC to 10 GHz. The device provides strong output power with efficient broadband performance and moderate gain, making it suitable as a driver or power stage in high-frequency systems. The amplifier is matched to 50 ohms and supplied in bare die form, allowing flexible integration into custom RF modules and microwave assemblies. Typical applications include instrumentation, commercial telecom transmission equipment, and fixed microwave backhaul systems.
General Specifications:
Device Type: GaN MMIC Power Amplifier
Frequency Range: DC – 10 GHz
Small Signal Gain: 13 dB (typical), 10 dB (minimum)
Gain Ripple: ±1.5 dB (typical), ±3.0 dB (maximum)
P1dB Output Power: 31 dBm (typical)
P5dB Output Power: 37 dBm (typical), 35 dBm (minimum)
P5dB Power Added Efficiency (PAE): 23% (typical)
P5dB Drain Efficiency: 26% (typical)
Noise Figure: 5 dB (typical, 1–9 GHz)
Input Return Loss: 9 dB (typical)
Output Return Loss: 7 dB (typical)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vds = 28 V, Ids = 300 mA, Vgs = -2 V
Package: Bare Die
