
General Specifications
AMCOM GaN MMIC Power Amplifiers are designed for applications requiring high power density, strong RF output, and broadband performance across microwave frequency ranges. This product family includes models covering frequencies from low GHz bands through higher microwave bands, with gain generally ranging from the low teens into the 30 dB range and saturated output power extending from the upper 30 dBm range into the mid 40 dBm range depending on the model.
These amplifiers are offered in multiple package styles including flange, bare die, QFN, and flange/SMT configurations. The combination of broad frequency coverage, elevated power capability, and flexible packaging makes this category well suited for RF and microwave system designs that require compact high power amplification.
GaN MMIC Power Amplifiers
AMCOM offers a range of GaN MMIC power amplifiers for RF and microwave applications that require higher output power, strong efficiency potential, and compact semiconductor packaging. This category includes models with varied frequency coverage, gain, bias conditions, and package styles to support different system requirements. Many models operate across broad frequency bands while delivering higher saturated output power than comparable lower power amplifier stages. The product range includes broadband and lower frequency models as well as parts intended for higher microwave bands and more demanding power applications. The table below lists representative AMCOM GaN MMIC power amplifier models with frequency range, gain, saturated output power, bias requirements, package options, and export classification. Click the PDF icon to open the corresponding datasheet.



