The AM003536WM-XX-R is a high-power ultra-broadband GaAs MMIC power amplifier designed for RF and microwave systems requiring strong gain, wide bandwidth, and reliable output performance. Operating from 10 MHz to 3.5 GHz, this device delivers high linear gain and excellent saturated output power in a compact ceramic or flange-mounted package. The amplifier is internally matched to 50 ohms for simplified integration into RF front-end modules, instrumentation, and general-purpose RF gain stages.
General Specifications:
Device Type: GaAs MMIC Power Amplifier
Frequency Range: 10 MHz – 3.5 GHz
Small Signal Gain: 22 dB (typical), 19–26 dB (range)
Gain Flatness: ±1.5 dB (typical), ±3 dB (max)
P1dB Output Power: 34 dBm (typical)
Saturated Output Power (Psat): 36 dBm (typical)
Third Order Intercept (IP3): 48 dBm (typical)
Noise Figure: Not specified
Input Return Loss: 13–20 dB (typical)
Output Return Loss: 7–10 dB (typical)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vdd ≈ +20 V, Idq1 ≈ 150 mA, Idq2 ≈ 550 mA
Package: Ceramic / Copper Flange / SMT Options
