The AM02018026WM-00-R is a broadband Gallium Arsenide (GaAs) MMIC distributed power amplifier designed for RF and microwave systems operating from 2 to 18 GHz. The amplifier delivers high gain and reliable broadband performance, providing approximately 23.5 dB of gain and up to 26 dBm saturated output power. The input and output are internally matched to 50 Ohms, simplifying integration into RF modules and microwave assemblies. Typical bias conditions are Vdd = +10 V, Idd = 200 mA. The device is ideal for test instrumentation, commercial telecom, and military or space applications.
General Specifications:
Device Type: GaAs MMIC Driver Amplifier
Frequency Range: 2 – 18 GHz
Small Signal Gain: 23.5 dB (typical), 20 dB (minimum)
Gain Ripple: ±3 dB (typical), ±1.5 dB (minimum)
P1dB Output Power: 24 dBm (0–12 GHz), 23 dBm (12–18 GHz)
P3dB Output Power: 26 dBm (0–12 GHz), 25 dBm (12–18 GHz)
Saturated Output Power (Psat): 26 dBm
Noise Figure: 4.5 dB
Input Return Loss: 10 dB
Output Return Loss: 10 dB (15 GHz), 7 dB (18 GHz)
Input / Output Impedance: 50 Ohms (matched)
Bias Conditions: Vdd = +10 V, Idd = 200 mA, Vgs1 = -0.8 V, Vgs2 = -0.8 V
Package Options: Bare die MMIC
